Infineon Technologies AG has partnered with FOXESS, a distinguished participant within the inexperienced power sector, to reinforce the effectivity and energy density of power storage purposes. Infineon will provide its superior energy semiconductor gadgets to FOXESS, facilitating the event of modern options within the inexperienced power trade.
Specifically, Infineon will present FOXESS with its CoolSiC MOSFETs 1200 V for industrial power storage purposes, together with EiceDRIVER gate drivers. Additionally, FOXESS’ string PV inverters will make the most of Infineon’s IGBT7 H7 1200 V energy semiconductor gadgets.
FOXESS’ H3PRO power storage collection makes use of Infineon’s CoolSiC MOSFETs 1200 V.
As the worldwide marketplace for photovoltaic power storage methods (PV-ES) continues to broaden quickly, bettering energy density has develop into essential for achievement. Infineon’s energy semiconductor gadgets, together with CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V collection, incorporate state-of-the-art semiconductor applied sciences tailor-made to industrial purposes, addressing the rising demand for effectivity and energy density in power storage purposes.
Mr. Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure at Infineon Technologies Greater China, expressed satisfaction in collaborating with FOXESS to drive decarbonization by way of greater energy density and extra dependable methods for PV-ES purposes.
FOXESS’ R Series redefines the general design of the 100 kW mannequin by utilizing Infineon’s IGBT7 H7 collection.
Mr. Zhu Jingcheng, Chairman of FOXESS, highlighted the numerous enhancements in product reliability and effectivity achieved by way of the assist of Infineon’s superior elements. He emphasised Infineon’s technical experience and product high quality as key components strengthening FOXESS’ competitiveness and market presence.
Infineon’s CoolSiC MOSFETs 1200 V provide excessive energy density, decreasing losses by 50 p.c and offering further power with out rising battery dimension. FOXESS’ H3PRO 15 kW-30 kW power storage collection, geared up with Infineon’s CoolSiC MOSFETs, has achieved outstanding effectivity and gross sales development within the international market.
Similarly, Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V collection enhances the general effectivity and energy density of inverters. By leveraging Infineon’s superior energy semiconductor gadgets, FOXESS has optimized the design of its R Series 75-110 kW industrial and business mannequin, reaching excellent effectivity of as much as 98.6 p.c.
Infineon presents a complete vary of EiceDRIVER gate drivers, guaranteeing nice integration with all energy gadgets, together with CoolSiC and IGBTs, simplifying design processes, and enhancing system reliability.
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